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SPEC NO: DSAA5263 REV NO: V.15 DATE: MAR/29/2011
PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: J.Yu
ERP: 1301000148
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No.
Dice
Lens Type
Iv (ucd) [1]
@ 10mA
Min.
Typ.
SA10-11EWA
High Efficiency Red (GaAsP/GaP)
WHITE DIFFUSED
14000
23000
Common Anode, Rt.
Hand Decimal
Description
Symbol
Parameter
Device
Typ.
Max.
Units
Test Conditions
λpeak
Peak Wavelength
High Efficiency Red
627
nm
IF=20mA
λD [1]
Dominant Wavelength
High Efficiency Red
625
nm
IF=20mA
Δλ1/2
Spectral Line Half-width
High Efficiency Red
45
nm
IF=20mA
C
Capacitance
High Efficiency Red
15
pF
VF=0V;f=1MHz
VF
[2]
Forward Voltage
Per Segment Or (DP)
High Efficiency Red
4.0
(2.0)
5.0
(2.5)
V
IF=20mA
IR
Reverse Current
Per Segment Or (DP)
High Efficiency Red
10
(10)
uA
VR=5V
(V
R=5V)
Parameter
High Efficiency Red
Units
Power dissipation
Per Segment Or (DP)
150
(75)
mW
DC Forward Current
Per Segment Or (DP)
30
(30)
mA
Peak Forward Current [1]
Per Segment Or (DP)
160
(160)
mA
Reverse Voltage
Per Segment Or (DP)
5
(5)
V
Operating / Storage Temperature
-40°C To +85°C
Lead Solder Temperature[2]
260°C For 3-5 Seconds
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